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| SUP40N10-35 New Product Vishay Siliconix N-Channel 105-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 37.5 36.0 0.035 @ VGS = 10 V 0.038 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive - Motor Drives - 12-V Systems D Note Book PC adaptors TO-220AB D G GDS Top View Ordering Information: SUP40N10-35--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 105 "20 37.5 21.5 75 35 61 107b 3.75 -55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mountc Junction-to-Ambient J ti t A bi t Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72797 S-40445--Rev. A, 15-Mar-04 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.4 Unit _C/W C/W 1 SUP40N10-35 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 105 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 105 V, VGS = 0 V, TJ = 125_C VDS = 105 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 6 V, ID = 10 A VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 75 0.026 0.028 0.035 0.038 0.063 0.077 S W 105 2 4 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 50 V, RL = 1.25 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W VDS = 50 V, VGS = 10 V, ID = 40 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2400 270 90 35 11 9 1.7 11 12 30 12 20 20 45 20 ns W 60 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr 25_C)b 37.5 75 IF = 30 A, VGS = 0 V 1.0 60 IF = 30 A, di/dt = 100 A/ms 5 0.15 1.5 100 8 0.4 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72797 S-40445--Rev. A, 15-Mar-04 SUP40N10-35 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 75 VGS = 10 thru 6 V 60 I D - Drain Current (A) I D - Drain Current (A) 60 75 Vishay Siliconix Transfer Characteristics 45 5V 45 30 30 TC = 125_C 15 25_C -55_C 0 15 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C r DS(on) - On-Resistance ( W ) 80 g fs - Transconductance (S) 25_C 125_C 0.06 0.08 On-Resistance vs. Drain Current 60 0.04 VGS = 6 V 40 20 0.02 VGS = 10 V 0 0 15 30 45 60 75 0.00 0 15 30 45 60 75 ID - Drain Current (A) ID - Drain Current (A) 3000 Capacitance 20 VDS = 50 V ID = 40 A Gate Charge 2400 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) Ciss 16 1800 12 1200 8 600 Crss 4 Coss 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Document Number: 72797 S-40445--Rev. A, 15-Mar-04 0 0 10 20 30 40 50 60 70 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP40N10-35 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature VGS = 10 V ID = 15 A I S - Source Current (A) 2.5 100 Source-Drain Diode Forward Voltage rDS(on) - On-Resiistance (Normalized) 2.0 1.5 10 TJ = 150_C TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time Drain-Source Breakdown Voltage vs. Junction Temperature 140 Drain-Source Breakdown Voltage (V) 135 130 125 120 115 110 105 -50 ID = 10 mA 100 I Dav (a) 10 IAV (A) @ TA = 25_C 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72797 S-40445--Rev. A, 15-Mar-04 SUP40N10-35 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 50 Vishay Siliconix 1000 Safe Operating Area Limited by rDS(on) 40 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 30 10 1 ms 10 ms 1 TC = 25_C Single Pulse dc, 100 ms 20 10 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72797 S-40445--Rev. A, 15-Mar-04 www.vishay.com 5 |
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